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| SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220FP PG-TO262 650 0.28 15 PG-TO220 V A * PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) Type SPP15N60C3 SPI15N60C3 SPA15N60C3 Package PG-TO220 PG-TO262 PG-TO220FP Ordering Code Q67040-S4600 Q67040-S4601 SP000216325 Marking 15N60C3 15N60C3 15N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 C TC = 100 C Symbol ID 15 9.4 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt page 1 Value SPP_I SPA Unit A 151) 9.41) 45 460 0.8 15 20 30 34 W C V/ns 2009-12-22 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=7.5A, VDD=50V 45 460 0.8 15 20 30 156 15 A mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=15A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C Operating and storage temperature Reverse diode dv/dt 6) Rev. 3.2 A V -55...+150 SPP15N60C3, SPI15N60C3 SPA15N60C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 15 A, Tj = 125 C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=675A, VGS =VDS VDS=600V, V GS=0V, Tj=25C Tj=150C Symbol min. RthJC RthJC_FP RthJA RthJA_FP Tsold - Values typ. max. 0.8 3.7 62 80 260 Unit K/W C Values typ. 700 3 0.1 0.25 0.68 1.23 max. 3.9 600 2.1 - Unit V V(BR)DS VGS=0V, ID=15A A 1 100 100 0.28 nA Gate-source leakage current I GSS VGS=30V, V DS=0V VGS=10V, ID=9.4A Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open drain Rev. 3.2 page 2 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 Electrical Characteristics Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance,5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD=480V, ID=15A, VGS=0 to 10V VDD=480V, ID=15A Symbol gfs Ciss Coss Crss Conditions min. VDS2*ID*R DS(on)max, ID=9.4A VGS=0V, VDS=25V, f=1MHz Values typ. 11.9 1660 540 40 80 127 10 5 50 5 max. 80 10 - Unit S pF Effective output capacitance,4) Co(er) VGS=0V, VDS=0V to 480V td(on) tr td(off) tf VDD=480V, VGS=0/10V, ID=15A, RG =4.3 - ns - 7 29 63 5 - nC V(plateau) VDD=480V, ID=15A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV 3Soldering temperature for TO-263: 220C, reflow 4C 5C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V DSS. 6I <=I , di/dt<=400A/us, V SD D DClink=400V, Vpeak page 3 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol SPP_I Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.012 0.023 0.043 0.156 0.178 0.072 Tj Symbol IS I SM VSD t rr Q rr I rrm dirr /dt Conditions min. TC=25C Values typ. 1 460 27 55 1300 max. 15 45 1.2 - Unit A VGS =0V, IF=IS VR =480V, IF =IS , diF/dt=100A/s - V ns C A A/s Tj=25C Value SPA 0.012 0.023 0.043 0.176 0.371 2.522 R th1 Unit K/W Symbol SPP_I Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 R th,n T case Value SPA 0.0002495 0.0009406 0.001298 0.00362 0.008025 0.412 0.0002495 0.0009406 0.001298 0.00362 0.009046 0.412 Unit Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 3.2 page 4 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 1 Power dissipation Ptot = f (TC) 170 SPP15N60C3 2 Power dissipation FullPAK Ptot = f (TC) 35 W W 140 120 25 Ptot 100 80 Ptot 20 15 60 10 40 20 0 0 5 20 40 60 80 100 120 C 160 0 0 20 40 60 80 100 120 TC C 160 Tj 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC=25C 10 2 4 Safe operating area FullPAK ID = f (VDS) parameter: D = 0, TC = 25C 10 2 A A 10 1 10 1 ID 10 0 ID 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 -2 0 10 10 1 10 2 V VDS 10 3 10 -2 0 10 10 1 10 2 10 V VDS 3 Rev. 3.2 page 5 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 5 Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T 10 1 6 Transient thermal impedance FullPAK ZthJC = f (tp) parameter: D = tp/t 10 1 K/W 10 0 K/W 10 0 ZthJC 10 -1 ZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -1 10 -2 10 -2 10 -3 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 10 -4 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 1 s 10 tp 7 Typ. output characteristic ID = f (VDS); Tj =25C parameter: tp = 10 s, VGS Vgs = 20V Vgs = 7V A Vgs = 6.5V Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V 40 Vgs = 4V 60 8 Typ. output characteristic ID = f (VDS); Tj =150C parameter: tp = 10 s, VGS 30 A ID 30 ID 20 Vgs = 20V Vgs = 7V Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V Vgs = 4V 15 20 10 10 5 0 0 4 8 12 16 20 V 28 0 0 4 8 12 16 20 V 28 VDS VDS Rev. 3.2 page 6 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, VGS 1.8 10 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 9.4 A, VGS = 10 V 1.6 SPP15N60C3 1.4 RDS(on) RDS(on) Vgs = 4V Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 7V Vgs = 20V 1.2 1 1.2 0.8 1 0.6 0.8 0.4 98% typ 0.6 0.2 0.4 0 5 10 15 20 A ID 30 0 -60 -20 20 60 100 C 180 Tj 11 Typ. transfer characteristics ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s 60 12 Typ. gate charge VGS = f (Q Gate) parameter: ID = 15 A pulsed 16 SPP15N60C3 A V 25C 12 VGS ID 40 150C 10 0,2 VDS max 0,8 VDS max 30 8 6 20 4 10 2 0 0 2 4 6 V 10 0 0 10 20 30 40 50 60 70 80 nC 100 VGS QGate 2009-12-22 Rev. 3.2 page 7 SPP15N60C3, SPI15N60C3 SPA15N60C3 13 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 2 SPP15N60C3 14 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 15 A A IF IAR 10 1 9 Tj(START)=25C 6 10 0 Tj(START)=125C Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 0 -3 10 10 -2 3 10 -1 10 0 10 1 10 2 VSD s 10 tAR 4 15 Avalanche energy EAS = f (Tj) par.: ID = 7.5 A, VDD = 50 V 0.5 16 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPP15N60C3 V mJ V(BR)DSS 680 660 640 620 E AS 0.3 0.2 600 580 560 0 20 540 -60 0.1 40 60 80 100 120 160 C Tj -20 20 60 100 C 180 Tj 2009-12-22 Rev. 3.2 page 8 SPP15N60C3, SPI15N60C3 SPA15N60C3 17 Avalanche power losses PAR = f (f ) parameter: EAR =0.8mJ 900 18 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 W pF Ciss 700 10 3 PAR 600 C 500 10 400 300 200 100 04 10 5 6 2 Coss 10 1 Crss 10 Hz f 10 10 0 0 100 200 300 400 V 600 VDS 19 Typ. Coss stored energy Eoss=f(VDS) 15 J E oss 9 6 3 0 0 100 200 300 400 V 600 VDS Rev. 3.2 page 9 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 Definition of diodes switching characteristics Rev. 3.2 page 10 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 PG-TO220-3-1, PG-TO220-3-21 : Outline Rev. 3.2 page 11 2009-12-22 SPP16N50C3 SPI16N50C3, SPA16N50C3 PG-TO220-3 (Fully isolated) 24 Dimensions in mm/ inches Rev 3.2 page 12 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 PG-TO262-3-1/PG-TO262-3-21 (I-PAK) Rev. 3.2 page 13 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 3.2 page 14 2009-12-22 |
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